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Yi-Ching Wu

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7

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428

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Erasing characteristics of Cu2O metal-insulator-metal resistive switching memory

2008 Applied Physics Letters
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A Temperature-Accelerated Method to Evaluate Data Retention of Resistive Switching Nonvolatile Memory

2008 IEEE Electron Device Letters
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Design of 90nm 1Gb ORNAND/sup TM/ Flash Memory with MirrorBit/sup TM/ Technology

2006 VLSIC | Symposium on VLSI Circuits
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Design of 90nm 1Gb ORNAND TM Flash Memory with MirrorBit TM Technology

2006 Symposium on VLSI Circuits
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Erase mechanism for copper oxide resistive switching memory cells with nickel electrode

2006 IEDM | International Electron Devices Meeting
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Citations (37)