Design of 90nm 1Gb ORNAND/sup TM/ Flash Memory with MirrorBit/sup TM/ Technology

Tiao-Hua Kuo,Nian Yang,Nancy Leong,E. Wang,F. Lai,Aaron Lee,H. Chen,S. Chandra,Yi-Ching Wu,T. Akaogi,A. Melik-Martirosian,A. Pourkeramati,J. Thomas,Michael A. Vanbuskirk

Design of 90nm 1Gb ORNAND/sup TM/ Flash Memory with MirrorBit/sup TM/ Technology

2006

Tiao-Hua Kuo
Nian Yang
Nancy Leong
E. Wang
F. Lai
Aaron Lee
H. Chen
S. Chandra
Yi-Ching Wu
T. Akaogi
A. Melik-Martirosian
A. Pourkeramati
J. Thomas
Michael A. Vanbuskirk

Using the virtual ground array structure of 2 bits/cell MirrorBittrade technology, a 90nm, 1.8V ORNANDtrade product combining the advantages of both NOR and NAND is presented. Full NAND functionality and performance compatibility is shown, while maintaining the NOR advantages

Keywords:

Computer science
Logic synthesis
Parallel computing
Computer architecture
NAND logic
Array data structure
NAND gate
Memory architecture
Virtual ground
NOR gate
Flash memory
Computer hardware

Correction
Source
Cite
Save
Machine Reading By IdeaReader

References

Citations