Erase mechanism for copper oxide resistive switching memory cells with nickel electrode

A metal-insulator-metal (MIM) device based on a Cu 2 O insulator has electrical characteristics significantly dependent on the oxide to top electrode (TE) interface. Cu/Cu 2 O/TE devices with various top electrodes have different thermal release characteristics, related to trap depth. The behavior of the device during erase with Ni and Ti top electrodes suggests different mechanisms. This paper focuses on Cu/Cu 2 O/Ni devices and proposes a thermal erase model, based on power calculations and temperature dependence