First demonstration of FinFET split-gate MONOS for high-speed and highly-reliable embedded flash in 16/14nm-node and beyond

FinFET split-gate metal-oxide nitride oxide silicon (SG-MONOS) Flash memories have been fabricated and operated for the first time. Excellent subthreshold characteristics and small threshold-voltage variability owing to a Fin-structure are clarified. It is demonstrated that Fin top-corner effects are well suppressed by incremental step pulse programming for source side injection. Highly reliable data retention at 150 °C after 250K program/erase cycles is confirmed for advanced automotive system applications.