Reverse tip sample scanning for precise and high-throughput electrical characterization of advanced nodes
2019
A new method is proposed to enable high-throughput and high-resolution electrical atomic force microscopy in nanoelectronics. Using a reversed pathway of operation, our technique yields a shorter time-to-data (<10x), enhanced dataset statistics and nm-precise resolution; as herein demonstrated for two- and three-dimensional carrier profiling in fin structures of advanced nodes.
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