Development of Cu etch process for advanced Cu interconnects
1998
Recent development efforts in copper etch processing show promising results in many areas that have posed significant challenges for this new technology. We report on etch performance for features down to 0.25 /spl mu/m with aspect ratios greater than 2:1. Copper etch rates greater than 5000 /spl square//min have been achieved, and corrosion-free post Cu etch performance has been demonstrated for periods in excess of 72 hours. Electrical tests were conducted and are presented in detail.
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