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Frank Gütle

Fraunhofer Society

6

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48

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Reverse bias stress test of GaN HEMTs for high-voltage switching applications

2012 IIRW | International Integrated Reliability Workshop
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Radiative inter-valley transitions as a dominant emission mechanism in AlGaN/GaN high electron mobility transistors

2012 Semiconductor Science and Technology
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Reliability and degradation mechanism of 0.25 µm AlGaN/GaN HEMTs under RF stress conditions

2011 IIRW | International Integrated Reliability Workshop
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