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O. Ambacher

Fraunhofer Society
Technische Universität München
Technische Universität Ilmenau

810

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22436

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MBE of III-Nitride Semiconductors for Electronic Devices

2019
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Influence of substrate holder configurations on bias enhanced nucleation area for diamond heteroepitaxy: Toward wafer-scale single-crystalline diamond synthesis

2019 Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena
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Determination of the graphene–graphite ratio of graphene powder by Raman 2D band symmetry analysis

2019 Analytical Methods
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Large-Signal Modeling of a Scalable High- ${Q}$ AlGaN/GaN High Electron-Mobility Varactor

2019 IEEE Transactions on Microwave Theory and Techniques
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State Dependency, Low-Frequency Dispersion, and Thermal Effects in Microwave III-V HEMTs

2018 EuMIC | European Microwave Integrated Circuits Conference
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Riemann-Pump based RF-Power DACs in GaN Technology for 5G Base Stations

2018
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High-Power Asymmetrical Three-Way GaN Doherty Power Amplifier at C-Band Frequencies

2018 EuMC | European Microwave Conference
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Determination of Elastic and Piezoelectric Properties of Al 0.84 Sc 0.16 N Thin Films

2018 IUS | Internaltional Ultrasonics Symposium
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Highly Isolating and Broadband Single-Pole Double-Throw Switches for Millimeter-Wave Applications Up to 330 GHz

2018 IEEE Transactions on Microwave Theory and Techniques
- Fabian Thome
- O. Ambacher
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A Novel Type of Broadband Radial Stub

2018 EuMC | European Microwave Conference
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