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J. Lichtenwalner
J. Lichtenwalner
North Carolina State University
Dipole
Dielectric
Logic gate
High-κ dielectric
Doping
3
Papers
23
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The impact of la-doping on the reliability of low Vth high-k/metal gate nMOSFETs under various gate stress conditions
2008
IEDM | International Electron Devices Meeting
Chiwon Kang
Chadwin D. Young
J. Huang
P. D. Kirsch
Dawei Heh
P. Sivasubramani
Hokyung Park
G. Bersuker
Byoung Hun Lee
Hyun-Sik Choi
Kyong Taek Lee
Yoon-Ha Jeong
J. Lichtenwalner
A. I. Kingon
H.-H. Tseng
R. Jammy
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Citations (11)
Performance and reliability characteristics of the band edge high-k/metal gate nMOSFETs with La-doped Hf-silicate gate dielectrics
2008
IRPS | International Reliability Physics Symposium
C. Y. Kang
C. S. Park
Dawei Heh
Chadwin D. Young
P. D. Kirsch
Hong Bae Park
Rino Choi
G. Bersuker
Ji-Woon Yang
Byoung Hun Lee
J. Lichtenwalner
Jesse S. Jur
A. I. Kingon
R. Jammy
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Citations (8)
nMOSFET Reliability Improvement attributed to the Interfacial Dipole formed by La Incorporation in HfO2
2007
The Japan Society of Applied Physics
C. Y. Kang
P. D. Kirsch
Dawei Heh
Chadwin D. Young
P. Sivasubramani
G. Bersuker
S. C. Song
Rino Choi
Byoung Hun Lee
J. Lichtenwalner
Jesse S. Jur
A. I. Kingon
R. Jammy
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Citations (4)
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