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nMOSFET Reliability Improvement attributed to the Interfacial Dipole formed by La Incorporation in HfO2
nMOSFET Reliability Improvement attributed to the Interfacial Dipole formed by La Incorporation in HfO2
2007
C. Y. Kang
P. D. Kirsch
Dawei Heh
Chadwin D. Young
P. Sivasubramani
G. Bersuker
S. C. Song
Rino Choi
Byoung Hun Lee
J. Lichtenwalner
Jesse S. Jur
A. I. Kingon
R. Jammy
Keywords:
Dipole
Atomic physics
Materials science
Condensed matter physics
Correction
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