Performance and reliability characteristics of the band edge high-k/metal gate nMOSFETs with La-doped Hf-silicate gate dielectrics

La-doped HfSiO samples showed lower V th and I gate , which was attributed to the dipole formation at the high-k/SiO 2 interface. With increasing SiO x content, significant mobility degradation was observed, most likely due to additional La- related charges in the interfacial layer. La-doped devices demonstrate better immunity in the PBTI test and low charge trapping efficiency compared to the control HfSiO.