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Masaharu Kobayashi

IBM

6

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CMOS-Compatible Self-Aligned In 0.53 Ga 0.47 As MOSFETs With Gate Lengths Down to 30 nm

2014 IEEE Transactions on Electron Devices
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Plasma Post-Oxidation for High Mobility Strained-Ge pFETs with Aggressively Scaled High-κ Dielectrics

2014
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Self-aligned III-V MOSFETs: Towards a CMOS compatible and manufacturable technology solution

2013 IEDM | International Electron Devices Meeting
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