CMOS-Compatible Self-Aligned In 0.53 Ga 0.47 As MOSFETs With Gate Lengths Down to 30 nm

We demonstrate self-aligned fully-depleted 20-nm-thick In 0.53 Ga 0.47 As-channel MOSFETs using CMOS-compatible device structures and manufacturable process flows. These devices consist of self-aligned source/drain extensions and self-aligned raised source/drain with low sheet resistance of 360 and 115 Ω/sq, respectively. We demonstrate short-channel MOSFETs with gate lengths L G down to 30 nm, low series resistance R EXT = 375 Ω·μm, and high peak saturation transconductance G MSAT = 1275 μS/μm at L G = 50 nm and drain bias V DS = 0.5 V. We obtain long-channel capacitive inversion thickness TINV = 2.3 nm and effective mobility μ EFF = 650 cm 2 /Vs at sheet carrier density N S = 5 × 10 12 cm -2 . Finally, using a calibrated quasi-ballistic FET model, we argue that for L G ≤ 20 nm, μ EFF ≈ 1000 cm 2 /Vs will lead to short-channel MOSFETs operating within 10% of the ballistic limit. Thus, our III-V processes and device structures are well-suited for future generations of high-performance CMOS applications at short gate lengths and tight gate pitches.