Self-aligned III-V MOSFETs: Towards a CMOS compatible and manufacturable technology solution

We demonstrate self-aligned fully-depleted III-V MOSFETs using CMOS-compatible device structures and manufacturable process flows. Processes with good manufacturability and scalability, such as, gate definition and spacer formation using RIE, and formation of self-aligned source/drain extensions (SDE) and self-aligned raised source/drain (RSD), have been established on III-Vs. We demonstrate short-channel devices down to gate length L G = 30 nm. Our best short-channel devices exhibit peak saturation transconductance G MSAT = 1140 μS/μm at L G = 60 nm and supply voltage V DD = 0.5 V.