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Marie Lesecq

university of lille

4

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Electrical and thermal analysis of AlGaN/GaN HEMTs transferred onto diamond substrate through an aluminum nitride layer

2021 Microwave and Optical Technology Letters
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Design and Fabrication of Planar Gunn Nanodiodes Based on Doped GaN

2019 APMC | Asia-Pacific Microwave Conference
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2 W/mm power density of an AlGaN/GaN HEMT grown on Free-Standing GaN Substrate at 40 GHz

2019 Semiconductor Science and Technology
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