Design and Fabrication of Planar Gunn Nanodiodes Based on Doped GaN

With the aim of producing free-running Gunn oscillations in GaN devices, we propose the use of planar asymmetrically shaped nanodiodes. The key novelty of our approach is the use of an active layer of highly doped bulk GaN, and not the typical 2DEG created by an AlGaN/GaN heterojunction. To this aim, efforts at different levels are being made in order to optimize the material growth, processing, simulation and design of the devices.