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Nicolas Defrance
Nicolas Defrance
university of lille
Optoelectronics
High-electron-mobility transistor
Materials science
Parasitic extraction
Transistor
4
Papers
17
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Electrical and thermal analysis of AlGaN/GaN HEMTs transferred onto diamond substrate through an aluminum nitride layer
2021
Microwave and Optical Technology Letters
Mahmoud Abou Daher
Marie Lesecq
Nicolas Defrance
Etienne Okada
Bertrand Boudart
Yannick Guhel
Jean-Guy Tartarin
Jean Claude De Jaeger
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Extraction of Packaged GaN Power Transistors Parasitics Using S-Parameters
2019
IEEE Transactions on Electron Devices
L. Pace
Nicolas Defrance
Arnaud Videt
Nadir Idir
J.C. De Jaeger
V. Avramovic
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Citations (12)
2 W/mm power density of an AlGaN/GaN HEMT grown on Free-Standing GaN Substrate at 40 GHz
2019
Semiconductor Science and Technology
Mohamed-Reda Irekti
Marie Lesecq
Nicolas Defrance
Etienne Okada
Eric Frayssinet
Yvon Cordier
J.G. Tartarin
Jean Claude De Jaeger
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Citations (3)
A Method to Determine Wide Bandgap Power Devices Packaging Interconnections
2019
SPI | IEEE Workshop on Signal and Power Integrity
Loris Pace
Nicolas Defrance
Jean Claude De Jaeger
Arnaud Videt
Nadir Idir
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Citations (2)
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