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nin asayama
nin asayama
Static random-access memory
Computer science
Embedded system
Microcontroller
Electrical engineering
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40nm Flash混載プロセスを使用した170℃動作可能な超低電力SRAM(低電圧/低消費電力技術,新デバイス・回路とその応用)
2014
SDM | SIAM International Conference on Data Mining
ka kou yokoyama
yuuitirou isii
ei juu kozima
atusi miyanisi
yosiki tuzi hasi
nin asayama
kazutosi siba
kouzi tanaka
tatuya fukuda
kouzi sinkyo
kazumasa yanagisawa
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40 nm Flash混載プロセスを使用した170℃動作可能な超低電力SRAM
2014
ka kou yokoyama
yuuitirou isii
ei juu kozima
atusi miyanisi
yosiki tuzi hasi
nin asayama
kazutosi siba
kouzi tanaka
tatuya fukuda
kouzi sinkyo
kazumasa yanagisawa
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40nm Flash混載プロセスを使用した170℃動作可能な超低電力SRAM (シリコン材料・デバイス)
2014
IEICE technical report. Speech
ka kou yokoyama
yuuitirou isii
ei juu kozima
atusi miyanisi
yosiki tuzi hasi
nin asayama
kazutosi siba
kouzi tanaka
tatuya fukuda
kouzi sinkyo
kazumasa yanagisawa
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高密度SRAMの微細化を可能とする階層セルアーキテクチャと多段階ワード線制御方式(SRAM,メモリ(DRAM,SRAM,フラッシュ,新規メモリ)技術)
2011
kouiti takeda
tosio saitou
nin asayama
dai sizi aimoto
hiroyuki obata
sinya itou
hisasi takahasi
kiyosi takeuti
masahiro nomura
yosihiro hayasi
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The semiconductor memory device and a testing method thereof
2009
nin asayama
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