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D.S. Wen
D.S. Wen
IBM
Electronic engineering
Oxide
CMOS
Physics
Optoelectronics
6
Papers
21
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Charge trapping and retention in ultra-thin oxide-nitride-oxide structures
1991
Solid-state Electronics
P. Olivo
Z. A. Weinberg
K.J. Stein
D.S. Wen
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Citations (2)
A Fully Planarized 0.25 /spl mu/m CMOS Technology
1991
VLSIT | Symposium on VLSI Technology
D.S. Wen
W.H. Chang
Y. Lii
A.C. Megdanis
P. McFarland
Gary B. Bronner
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Characteristics of vertical p-channel MOSFETs for high density circuit application
1991
VLSI-TSA | International Symposium on VLSI Technology, Systems, and Applications
D.S. Wen
W.H. Chang
T.V. Rajeevakumar
Gary B. Bronner
P. McFarland
Y. Lii
T.C. Chen
F. L. Pesavento
M. P. Manny
W. Hwang
Sang Hoo Dhong
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A comparative study of hot-carrier instabilities in p- and n-type poly gate MOSFETs
1989
IEDM | International Electron Devices Meeting
Ching-Hsiang Hsu
D.S. Wen
Matthew R. Wordeman
Yuan Taur
Tak H. Ning
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Citations (2)
A self-aligned inverse-T gate fully overlapped LDD device for sub-half micron CMOS
1989
IEDM | International Electron Devices Meeting
D.S. Wen
Ching-Hsiang Hsu
Yuan Taur
D.S. Zicherman
Matthew R. Wordeman
Tak H. Ning
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Citations (8)
Characteristics of CMOS devices fabricated using high quality thin PECVD gate oxide
1989
IEDM | International Electron Devices Meeting
L.K. Wang
D.S. Wen
A. A. Bright
T.N. Nguyen
W. Chang
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Citations (7)
1