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F. L. Pesavento
F. L. Pesavento
Electronic engineering
Electrical engineering
Very-large-scale integration
Computer science
CMOS
4
Papers
39
Citations
0.01
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Measurement of history effect in PD/SOI single-ended CPL circuit
2001
SOI | International SOI Conference
K.A. Jenkins
R. Puri
Ching-Te Chuang
F. L. Pesavento
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Citations (4)
Characteristics of vertical p-channel MOSFETs for high density circuit application
1991
VLSI-TSA | International Symposium on VLSI Technology, Systems, and Applications
D.S. Wen
W.H. Chang
T.V. Rajeevakumar
Gary B. Bronner
P. McFarland
Y. Lii
T.C. Chen
F. L. Pesavento
M. P. Manny
W. Hwang
Sang Hoo Dhong
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Citations (1)
A 22-ns 1-Mbit CMOS high-speed DRAM with address multiplexing
1989
IEEE Journal of Solid-state Circuits
Nicky Chau-Chun Lu
Gary B. Bronner
Koji Kitamura
Roy Edwin Scheuerlein
Walter H. Henkels
Sang Hoo Dhong
Yasunao Katayama
Toshiaki Kirihata
H. Niijima
Robert L. Franch
W. Wang
M Nishiwaki
F. L. Pesavento
T.V. Rajeevakumar
Y. Sakaue
Y. Suzuki
Y. Iguchi
E. Yano
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Citations (14)
Parameter Dependence of RIE Induced Radiation Damage in Silicon Dioxide
1981
Journal of The Electrochemical Society
L. M. Ephrath
D. J. DiMaria
F. L. Pesavento
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Citations (20)
1