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A. Gauthier
A. Gauthier
STMicroelectronics
Heterojunction bipolar transistor
Annealing (metallurgy)
CMOS
Dopant
Silicon
3
Papers
6
Citations
0
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3D atomic-scale investigation of carbon segregation in phosphorus co-implanted silicon
2019
Applied Physics Letters
P. Dumas
Sébastien Duguay
J. Borrel
A. Gauthier
E. Ghegin
Didier Blavette
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Citations (4)
450 GHz $f_{\text{T}}$ SiGe:C HBT Featuring an Implanted Collector in a 55-nm CMOS Node
2018
A. Gauthier
J. Borrel
Pascal Chevalier
G. Avenier
A. Montagné
M. Juhel
R. Duru
L. Clement
C. Borowiak
M. Buczko
Christophe Gaquiere
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Citations (1)
SiGe HBT / CMOS process thermal budget co-optimization in a 55-nm CMOS node
2017
BCTM | Bipolar/BiCMOS Circuits and Technology Meeting
A. Gauthier
Pascal Chevalier
G. Avenier
G. Ribes
M.-L. Rellier
Y. Campidelli
R. Beneyton
D. Celi
G. Haury
Christophe Gaquiere
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Citations (1)
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