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J. Borrel
J. Borrel
STMicroelectronics
Materials science
Silicon
Ion implantation
Annealing (metallurgy)
Dopant
7
Papers
5
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0
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Composition of Carbon Clusters in Implanted Silicon Using Atom Probe Tomography.
2021
Microscopy and Microanalysis
P. Dumas
Sébastien Duguay
J. Borrel
Fanny Hilario
Didier Blavette
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Low temperature carbon co-implantation in silicon: Defects suppression and diffusion modeling
2021
Journal of Applied Physics
P. Dumas
P.L. Julliard
J. Borrel
Sébastien Duguay
F. Hilario
Fabien Deprat
Vincent Lu
W. Zhao
Wei Zou
Edwin Arevalo
Didier Blavette
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Pre-Amorphization Implants and in-situ Surface Preparation Optimization for Low Co-Silicided Area Density
2019
IWJT | International Workshop on Junction Technology
J. Borrel
M. Gregoire
E. Ghegin
Sylvain Joblot
Remi Vallat
Alexia Valéry
Marc Juhel
R.A. Bianchi
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3D atomic-scale investigation of carbon segregation in phosphorus co-implanted silicon
2019
Applied Physics Letters
P. Dumas
Sébastien Duguay
J. Borrel
A. Gauthier
E. Ghegin
Didier Blavette
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Prevention of Temperature-Induced Dewetting of Implanted SOI via Heated Ion Implantation
2018
J. Borrel
Alexis Gauthier
Fabien Deprat
Vincent Lu
F. Abbate
Sylvain Joblot
L. Clement
Heloise Tupin
Wei Zou
E. A. Arevalo
Pascal Chevalier
Didier Dutartre
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