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A. Pouydebasque

NXP Semiconductors

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Improvements in low temperature (<625°C) FDSOI devices down to 30nm gate length

2012 VLSI-TSA | International Symposium on VLSI Technology, Systems, and Applications
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3D monolithic integration

2011 ISCAS | International Symposium on Circuits and Systems
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A new step in GeOI pFET scaling and Off-State current reduction: 30nm gate length and record I ON /I OFF ratio

2010 VLSIT | Symposium on VLSI Technology
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Gate-all-around technology: Taking advantage of ballistic transport?

2010 Solid-state Electronics
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20nm gate length trigate pFETs on strained SGOI for high performance CMOS

2010 VLSIT | Symposium on VLSI Technology
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Ion-Ioff performance analysis of FDSOI MOSFETs with low processing temperature

2010 The Japan Society of Applied Physics
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GeOI pMOSFETs Scaled Down to 30-nm Gate Length With Record Off-State Current

2010 IEEE Electron Device Letters
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Sub-100nm high-K metal gate GeOI pMOSFETs performance: Impact of the Ge channel orientation and of the source injection velocity

2009 VLSI-TSA | International Symposium on VLSI Technology, Systems, and Applications
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Challenges and Progress in Germanium-on-Insulator Materials and Device Development towards ULSI Integration

2009
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High performance 70 nm gate length germanium-on-insulator pMOSFET with high-k/metal gate

2009 Solid-state Electronics
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Citations (39)