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J. Berthoz
J. Berthoz
Electrical engineering
Electronic engineering
Logic gate
Silicon on insulator
Silicon
2
Papers
10
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0
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Improvements in low temperature (<625°C) FDSOI devices down to 30nm gate length
2012
VLSI-TSA | International Symposium on VLSI Technology, Systems, and Applications
C. Xu
P. Batude
Maud Vinet
Mireille Mouis
M. Casse
Benoit Sklenard
Benjamin Colombeau
Quentin Rafhay
C. Tabone
J. Berthoz
B. Previtali
J. Mazurier
L. Brunet
L. Brevard
F.A. Khaja
J.-M. Hartmann
F. Allain
A. Toffoli
R. Kies
C. Le Royer
S. Morvan
A. Pouydebasque
X. Garros
A. Pakfar
C. Tavernier
O. Faynot
T. Poiroux
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FDSOI devices: A solution to achieve low junction leakage with low temperature processes (≤ 650°C)
2012
ULIS | International Conference on Ultimate Integration on Silicon
Benoit Sklenard
C. Xu
Perrine Batude
B. Previtali
C. Tabone
Quentin Rafhay
Benjamin Colombeau
F.A. Khaja
Ignacio Martin-Bragado
J. Berthoz
F. Allain
A. Toffoli
R. Kies
Marie-Anne Jaud
P. Rivallin
S. Cristoloveanu
C. Tavernier
O. Faynot
Thierry Poiroux
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Citations (4)
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