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Nolan S. Hendricks
Nolan S. Hendricks
Air Force Research Laboratory
Optoelectronics
Analytical chemistry
Chemistry
Critical field
Refractory metals
3
Papers
38
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Self-Aligned Gate Thin-Channel β-Ga 2 O 3 MOSFETs
2019
DRC | Device Research Conference
Kyle J. Liddy
Nolan S. Hendricks
Andrew J. Green
Andreas Popp
Miles Lindquist
Kevin D. Leedy
Stephen E. Tetlak
N. Moser
Gunter Wagner
Kelson D. Chabak
Gregg H. Jessen
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Thin channel β-Ga 2 O 3 MOSFETs with self-aligned refractory metal gates
2019
Applied Physics Express
Kyle J. Liddy
Andrew J. Green
Nolan S. Hendricks
Eric R. Heller
N. Moser
Kevin D. Leedy
Andreas Popp
Miles Lindquist
Stephen E. Tetlak
Günter Wagner
Kelson D. Chabak
Gregg H. Jessen
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Citations (11)
Lateral β-Ga 2 O 3 field effect transistors
2019
Semiconductor Science and Technology
Kelson D. Chabak
Kevin D. Leedy
Andrew J. Green
Shin Mou
Adam T. Neal
Thaddeus J. Asel
Eric R. Heller
Nolan S. Hendricks
Kyle J. Liddy
Antonio Crespo
Nicholas C. Miller
Miles Lindquist
N. Moser
Robert C. Fitch
Dennis E. Walker
Donald L. Dorsey
Gregg H. Jessen
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Citations (27)
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