Old Web
English
Sign In
Acemap
>
authorDetail
>
Toshikazu Tanioka
Toshikazu Tanioka
Mitsubishi
Electronic engineering
Gate oxide
Threshold voltage
Materials science
Optoelectronics
4
Papers
7
Citations
0
KQI
Citation Trend
Filter By
Interval:
1900~2024
1900
2024
Author
Papers (4)
Sort By
Default
Most Recent
Most Early
Most Citation
No data
Journal
Conference
Others
High Performance 4H-SiC MOSFETs with Optimum Design of Active Cell and Re-Oxidation
2018
Toshikazu Tanioka
Yuji Ebiike
Yasunori Oritsuki
Masayuki Imaizumi
Masayoshi Tarutani
Show All
Source
Cite
Save
Citations (0)
Breakthrough in trade-off between threshold voltage and specific on-resistance of SiC-MOSFETs
2013
ISPSD | International Symposium on Power Semiconductor Devices and IC's
Masayuki Furuhashi
Toshikazu Tanioka
Yuji Ebiike
Eisuke Suekawa
Yoichiro Tarui
Shinji Sakai
Naoki Yutani
Naruhisa Miura
Masayuki Imaizumi
Satoshi Yamakawa
Tatsuo Oomori
Show All
Source
Cite
Save
Citations (7)
The silicon carbide semiconductor device and method of manufacturing a silicon carbide semiconductor device
2012
Tomokatsu Watanabe
Naruhisa Miura
Masayuki Furuhashi
Shiro Hino
Toshikazu Tanioka
Show All
Source
Cite
Save
Citations (0)
A method for producing a Siliciumcarbidhalbleiterbauteils
2010
Masayuki Furuhashi
Masayuki Imaizumi
Toshikazu Tanioka
Show All
Source
Cite
Save
Citations (0)
1