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Masayuki Imaizumi
Masayuki Imaizumi
Mitsubishi
Electronic engineering
Engineering
Wide-bandgap semiconductor
Electrical engineering
MOSFET
4
Papers
88
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Impact of grounding the bottom oxide protection layer on the short-circuit ruggedness of 4H-SiC trench MOSFETs
2014
ISPSD | International Symposium on Power Semiconductor Devices and IC's
Rina Tanaka
Yasuhiro Kagawa
Nobuo Fujiwara
Katsutoshi Sugawara
Yutaka Fukui
Naruhisa Miura
Masayuki Imaizumi
Satoshi Yamakawa
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Citations (25)
Breakthrough in trade-off between threshold voltage and specific on-resistance of SiC-MOSFETs
2013
ISPSD | International Symposium on Power Semiconductor Devices and IC's
Masayuki Furuhashi
Toshikazu Tanioka
Yuji Ebiike
Eisuke Suekawa
Yoichiro Tarui
Shinji Sakai
Naoki Yutani
Naruhisa Miura
Masayuki Imaizumi
Satoshi Yamakawa
Tatsuo Oomori
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Citations (7)
Successful Development of 1.2 kV 4H-SiC MOSFETs with the Very Low On-Resistance of 5 mΩcm2
2006
ISPSD | International Symposium on Power Semiconductor Devices and IC's
N. Miura
K. Fujihira
Y. Nakao
T Watanabe
Yoichiro Tarui
S.-i. Kinouchi
Masayuki Imaizumi
Tatsuo Oomori
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Citations (34)
Successful enhancement of lifetime for SiO/sub 2/ on 4H-SiC by N/sub 2/O anneal
2004
IEEE Electron Device Letters
Keiko Fujihira
Naruhisa Miura
Katsuomi Shiozawa
Masayuki Imaizumi
Ken-ichi Ohtsuka
Tetsuya Takami
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Citations (22)
1