The silicon carbide semiconductor device and method of manufacturing a silicon carbide semiconductor device

It is an object of the present invention to provide a silicon carbide semiconductor device that makes it possible to increase the reliability, while a gate current is suppressed, and to provide a method for manufacturing the silicon carbide semiconductor device. The silicon carbide semiconductor device of the present invention comprises: a drift layer (2) made of silicon carbide; a base region (3) selectively in a surface layer of the drift layer (2) is formed; a source region that is selectively formed in a superficial layer of the base region (3); a source electrode (8) which is selectively formed on the source region; a gate insulating layer (6) which is formed such that it extends over the source region of time; and a gate electrode (7), which is formed on the gate insulating layer (6). The source region includes a first source region (4) which is arranged below the source electrode (8), and a second source region (10) of the first source region (4) surrounding it. The dopant concentration in the superficial layer of the second source region (10) is lower than the dopant concentration in a superficial layer of the first source region (4). The dopant concentration in the second source region (10) is higher than in its surface area in the deep portion.