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Rama Kambhampati
Rama Kambhampati
State University of New York System
MOSFET
Electronic engineering
Physics
Optoelectronics
High-κ dielectric
3
Papers
29
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LOW FREQUENCY NOISE AND INTERFACE DENSITY OF TRAPS IN InGaAs MOSFETs WITH GdScO3 HIGH-K DIELECTRIC
2011
International Journal of High Speed Electronics and Systems
Sergey L. Rumyantsev
W. Stillman
Michael S. Shur
Tassilo Heeg
Darrell G. Schlom
S. Koveshnikov
Rama Kambhampati
V. Tokranov
Serge Oktyabrsky
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Small-Signal Response of Inversion Layers in High-Mobility $\hbox{In}_{0.53}\hbox{Ga}_{0.47}\hbox{As}$ MOSFETs Made With Thin High- $\kappa$ Dielectrics
2010
IEEE Transactions on Electron Devices
A. Ali
H. Madan
S. Koveshnikov
Serge Oktyabrsky
Rama Kambhampati
Tassilo Heeg
Darrell G. Schlom
Suman Datta
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Citations (8)
Small-Signal Response of Inversion Layers in High-Mobility {In}_{0.53}{Ga}_{0.47}{As} MOSFETs Made With Thin High- kappa Dielectrics
2010
IEEE Transactions on Electron Devices
A. Ali
H. Madan
S. Koveshnikov
Serge Oktyabrsky
Rama Kambhampati
Tassilo Heeg
Darrell G. Schlom
Suman Datta
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Citations (21)
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