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Ahtisham-ul-Haq Pampori
Ahtisham-ul-Haq Pampori
Indian Institute of Technology Kanpur
Optoelectronics
Electronic engineering
Materials science
Physics
industry standard
5
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45
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Modeling of Bias-Dependent Effective Velocity and Its Impact on Saturation Transconductance in AlGaN/GaN HEMTs
2021
IEEE Transactions on Electron Devices
Ahtisham-ul-Haq Pampori
Sheikh Aamir Ahsan
Raghvendra Dangi
Umakant Goyal
Sanjay Kumar Tomar
Meena Mishra
Yogesh Singh Chauhan
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ASM GaN: Industry Standard Model for GaN RF and Power Devices—Part 1: DC, CV, and RF Model
2019
IEEE Transactions on Electron Devices
Sourabh Khandelwal
Yogesh Singh Chauhan
Tor A. Fjeldly
Sudip Ghosh
Ahtisham-ul-Haq Pampori
Dhawal Mahajan
Raghvendra Dangi
Sheikh Aamir Ahsan
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Physics-based Compact Modeling of MSM-2DEG GaN-based Varactors for THz Applications
2018
EDTM | IEEE Electron Devices Technology and Manufacturing Conference
Ahtisham-ul-Haq Pampori
Sheikh Aamir Ahsan
Sudip Ghosh
Sourabh Khandelwal
Yogesh Singh Chauhan
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Citations (2)
ASM-HEMT: Industry Standard GaN HEMT Model for Power and RF Applications
2018
Sheikh Aamir Ahsan
Yogesh Singh Chauhan
R Dangi
Sudip Ghosh
Sourabh Khandelwal
Ahtisham-ul-Haq Pampori
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A New Small-Signal Parameter Extraction Technique for Large Gate-Periphery GaN HEMTs
2017
IEEE Microwave and Wireless Components Letters
Sheikh Aamir Ahsan
Ahtisham-ul-Haq Pampori
Sudip Ghosh
Sourabh Khandelwal
Yogesh Singh Chauhan
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Citations (9)
1