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Raghvendra Dangi
Raghvendra Dangi
Indian Institute of Technology Kanpur
Optoelectronics
Power semiconductor device
Logic gate
Gallium nitride
Spice
2
Papers
34
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Modeling of Bias-Dependent Effective Velocity and Its Impact on Saturation Transconductance in AlGaN/GaN HEMTs
2021
IEEE Transactions on Electron Devices
Ahtisham-ul-Haq Pampori
Sheikh Aamir Ahsan
Raghvendra Dangi
Umakant Goyal
Sanjay Kumar Tomar
Meena Mishra
Yogesh Singh Chauhan
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ASM GaN: Industry Standard Model for GaN RF and Power Devices—Part 1: DC, CV, and RF Model
2019
IEEE Transactions on Electron Devices
Sourabh Khandelwal
Yogesh Singh Chauhan
Tor A. Fjeldly
Sudip Ghosh
Ahtisham-ul-Haq Pampori
Dhawal Mahajan
Raghvendra Dangi
Sheikh Aamir Ahsan
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Citations (34)
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