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Tor A. Fjeldly

Norwegian University of Science and Technology
Norwegian Institute of Technology
Max Planck Society

205

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ASM GaN: Industry Standard Model for GaN RF and Power Devices—Part 1: DC, CV, and RF Model

2019 IEEE Transactions on Electron Devices
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Determination of Surface Donor States Properties and Modeling of InAlN/AlN/GaN Heterostructures

2016 IEEE Transactions on Electron Devices
- Nitin Goyal
- Tor A. Fjeldly
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Surface-Potential-Based RF Large Signal Model for Gallium Nitride HEMTs

2015 CSICS | Compound Semiconductor Integrated Circuit Symposium
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Modeling of temperature effects in a surface-potential based ASM-HEMT model

2014
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Surface donor states distribution post SiN passivation of AlGaN/GaN heterostructures

2014 Applied Physics Letters
- Nitin Goyal
- Tor A. Fjeldly
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Frontiers in electronics : advanced modeling of nanoscale electron devices

2014
- Benjamin Iniguez
- Tor A. Fjeldly
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ASM GaN HEMT: Advanced SPICE Model for GaN HEMTs

2014
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Analytical modeling of AlGaN/AlN/GaN heterostructures including effects of distributed surface donor states

2014 Applied Physics Letters
- Nitin Goyal
- Tor A. Fjeldly
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Erratum: “Effects of strain relaxation on bare surface barrier height and two-dimensional electron gas in AlxGa1−xN/GaN heterostructures” [J. Appl. Phys. 113, 014505 (2013)]

2014 Journal of Applied Physics
- Nitin Goyal
- Tor A. Fjeldly
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A compact charge-based physical model for AlGaN/GaN HEMTs

2013 WiSNet | Topical Conference on Wireless Sensors and Sensor Networks
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