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K. Oshima

École nationale supérieure d'électronique et de radioélectricité de Grenoble

4

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120

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Low-temperature performance of ultimate Si-based MOSFETs

2003
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Carrier mobility in advanced CMOS devices with metal gate and HfO2 gate dielectric

2003 Solid-state Electronics
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Metal gate and high-k integration for advanced CMOS devices

2003 PPID | International Symposium on Plasma Process-Induced Damage
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75 nm damascene metal gate and high-k integration for advanced CMOS devices

2002 IEDM | International Electron Devices Meeting
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Citations (64)