author-photo

F Lime

École nationale supérieure d'électronique et de radioélectricité de Grenoble

14

Papers

278

Citations

Citation Trend

Filter By

Papers (14) Sort By

Journal Conference Others

Low temperature characterization of effective mobility in uniaxially and biaxially strained nMOSFETs

2006 Solid-state Electronics
Show All
- Source
- Cite
- Save
Citations (23)
Experimental and comparative investigation of low and high field transport in substrate- and process-induced strained nanoscaled MOSFETs

2005 VLSIT | Symposium on VLSI Technology
Show All
- Source
- Cite
- Save
Citations (43)
Low temperature characterization of effective mobility in uniaxially and biaxially strained N-MOSFETs

2005 ESSDERC | European Solid-State Device Research Conference
Show All
- Source
- Cite
- Save
Citations (5)
Investigation of electron and hole mobilities in MOSFETs with TiN/HfO2/SiO2 gate stack

2003 ESSDERC | European Solid-State Device Research Conference
Show All
- Source
- Cite
- Save
Citations (2)
New approach for the gate current source-drain partition modeling in advanced MOSFETs

2003 Solid-state Electronics
Show All
- Source
- Cite
- Save
Citations (21)
Charge trapping in SiO2/HfO2/TiN gate stack

2003 Microelectronics Reliability
Show All
- Source
- Cite
- Save
Citations (6)
Low-temperature performance of ultimate Si-based MOSFETs

2003
Show All
- Source
- Cite
- Save
Citations (1)
Investigation of electron and hole mobilities in MOSFETs with TiN/HfO/sub 2//SiO/sub 2/ gate stack

2003 ESSDERC | European Solid-State Device Research Conference
Show All
- Source
- Cite
- Save
Citations (2)
Carrier mobility in advanced CMOS devices with metal gate and HfO2 gate dielectric

2003 Solid-state Electronics
Show All
- Source
- Cite
- Save
Citations (52)
Metal gate and high-k integration for advanced CMOS devices

2003 PPID | International Symposium on Plasma Process-Induced Damage
Show All
- Source
- Cite
- Save
Citations (3)