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S. Cristoloveanu

École nationale supérieure d'électronique et de radioélectricité de Grenoble
Centre national de la recherche scientifique

600

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8533

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Optimization of photoelectron in-situ sensing device in FD-SOI

2021 IEEE Journal of the Electron Devices Society
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Citations (1)
New prospects on high on-current and steep subthreshold slope for innovative Tunnel FET architectures

2019 Solid-state Electronics
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Trap and 1/ f -noise effects at the surface and core of GaN nanowire gate-all-around FET structure

2019 Nano Research
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Doping profile extraction in thin SOI films: Application to A2RAM

2019 Solid-state Electronics
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Citations (2)
GDNMOS and GDBIMOS devices for high voltage ESD protection in thin film advanced FD-SOI technology

2019 Solid-state Electronics
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Impact of contact and channel resistance on the frequency-dependent capacitance and conductance of pseudo-MOSFET

2019 Solid-state Electronics
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Deep Sub-60 mV/decade Subthreshold Swing in AlGaN/GaN FinMISHFETs with M-Plane Sidewall Channel

2019 IEEE Transactions on Electron Devices
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Investigation of thin gate-stack Z2-FET devices as capacitor-less memory cells

2019 Solid-state Electronics
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Characteristics of band modulation FET on sub 10 nm SOI

2019 Japanese Journal of Applied Physics
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Performance Improvement and Sub-60 mV/Decade Swing in AlGaN/GaN FinFETs by Simultaneous Activation of 2DEG and Sidewall MOS Channels

2018 IEEE Transactions on Electron Devices
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