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A. Bonnevialle
A. Bonnevialle
Council for the Curriculum, Examinations & Assessment
Silicon on insulator
Ultimate tensile strength
Chemistry
Creep
Wafer
3
Papers
2
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0
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2024
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On the use of a localized STRASS technique to obtain highly tensile strained Si regions in advanced FDSOI CMOS devices
2016
Physica Status Solidi (c)
A. Bonnevialle
S. Reboh
C. Le Royer
Y. Morand
J.-M. Hartmann
D. Rouchon
J.M. Pedini
C. Tabone
N. Rambal
Anthony Payet
C. Plantier
F. Bœuf
M. Haond
A. Claverie
M. Vinet
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A New Method to Induce Local Tensile Strain in SOI Wafers: First Strain Results of the "BOX Creep" Technique
2015
A. Bonnevialle
C. Le Royer
Y. Morand
S. Reboh
J.M. Pedini
A. Roule
D. Marseilhan
P. Besson
D. Rouchon
N. Bernier
C. Tabone
C. Plantier
L. Grenouillet
M. Vinet
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Converting SOI to sSOI through Amorphization and Crystallization: Material Analysis and Device Demonstration
2015
ECS Journal of Solid State Science and Technology
S. Maitrejean
Nicolas Loubet
E. Augendre
Pierre Morin
S. Reboh
N. Bernier
R. Wacquez
B. Lherron
A. Bonnevialle
Qing Liu
J.-M. Hartmann
Hong He
Aomar Halimaoui
Juntao Li
S. Pilorget
Joel Kanyandekwe
L. Grenouillet
F. Chafik
Y. Morand
C. Le Royer
Oliver Faynot
M. Celik
Bruce B. Doris
B. De Salvo
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