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Olf Pätzold
Olf Pätzold
Freiberg University of Mining and Technology
Chemistry
Epitaxy
Sapphire
Flow (psychology)
Computer simulation
5
Papers
17
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Recent progress of high temperature vapor phase epitaxy for the growth of GaN layers – Controlled coalescence of nucleation layers
2020
Journal of Crystal Growth
T. Schneider
M. Förste
G. Lukin
P. Fischer
M. Barchuk
Christian Schimpf
Elke Niederschlag
Olf Pätzold
David Rafaja
M. Stelter
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Heteroepitaxial growth of GaN on sapphire substrates by high temperature vapor phase epitaxy
2019
Journal of Crystal Growth
G. Lukin
T. Schneider
M. Förste
M. Barchuk
Christian Schimpf
Christian Röder
F. Zimmermann
Elke Niederschlag
Olf Pätzold
F.C. Beyer
David Rafaja
M. Stelter
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Citations (4)
Directional solidification of gallium under time-dependent magnetic fields with in situ measurements of the melt flow and the solid-liquid interface
2019
Journal of Crystal Growth
N. Thieme
M. Keil
D. Meier
P. Bönisch
K. Dadzis
Olf Pätzold
M. Stelter
Lars Büttner
Jürgen Czarske
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Citations (9)
Defect-rich GaN interlayer facilitating the annihilation of threading dislocations in polar GaN crystals grown on (0001)-oriented sapphire substrates
2019
Journal of Applied Physics
M. Barchuk
Mykhaylo Motylenko
T. Schneider
M. Förste
Christian Röder
A. Davydok
Sergey Lazarev
Christian Schimpf
Christina Wüstefeld
Olf Pätzold
David Rafaja
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Citations (3)
Model Experiments for Flow Phenomena in Crystal Growth
2019
Crystal Research and Technology
K. Dadzis
Olf Pätzold
Gunter Gerbeth
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Citations (1)
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