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M. Förste
M. Förste
Freiberg University of Mining and Technology
Epitaxy
Sapphire
Nucleation
Chemistry
Scanning electron microscope
3
Papers
7
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0
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Recent progress of high temperature vapor phase epitaxy for the growth of GaN layers – Controlled coalescence of nucleation layers
2020
Journal of Crystal Growth
T. Schneider
M. Förste
G. Lukin
P. Fischer
M. Barchuk
Christian Schimpf
Elke Niederschlag
Olf Pätzold
David Rafaja
M. Stelter
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Heteroepitaxial growth of GaN on sapphire substrates by high temperature vapor phase epitaxy
2019
Journal of Crystal Growth
G. Lukin
T. Schneider
M. Förste
M. Barchuk
Christian Schimpf
Christian Röder
F. Zimmermann
Elke Niederschlag
Olf Pätzold
F.C. Beyer
David Rafaja
M. Stelter
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Defect-rich GaN interlayer facilitating the annihilation of threading dislocations in polar GaN crystals grown on (0001)-oriented sapphire substrates
2019
Journal of Applied Physics
M. Barchuk
Mykhaylo Motylenko
T. Schneider
M. Förste
Christian Röder
A. Davydok
Sergey Lazarev
Christian Schimpf
Christina Wüstefeld
Olf Pätzold
David Rafaja
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Citations (3)
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