Old Web
English
Sign In
Acemap
>
authorDetail
>
T. Schneider
T. Schneider
Freiberg University of Mining and Technology
Epitaxy
Sapphire
Chemistry
Evaporation
Impurity
5
Papers
19
Citations
0.00
KQI
Citation Trend
Filter By
Interval:
1900~2024
1900
2024
Author
Papers (5)
Sort By
Default
Most Recent
Most Early
Most Citation
No data
Journal
Conference
Others
Recent progress of high temperature vapor phase epitaxy for the growth of GaN layers – Controlled coalescence of nucleation layers
2020
Journal of Crystal Growth
T. Schneider
M. Förste
G. Lukin
P. Fischer
M. Barchuk
Christian Schimpf
Elke Niederschlag
Olf Pätzold
David Rafaja
M. Stelter
Show All
Source
Cite
Save
Citations (0)
Heteroepitaxial growth of GaN on sapphire substrates by high temperature vapor phase epitaxy
2019
Journal of Crystal Growth
G. Lukin
T. Schneider
M. Förste
M. Barchuk
Christian Schimpf
Christian Röder
F. Zimmermann
Elke Niederschlag
Olf Pätzold
F.C. Beyer
David Rafaja
M. Stelter
Show All
Source
Cite
Save
Citations (4)
Defect-rich GaN interlayer facilitating the annihilation of threading dislocations in polar GaN crystals grown on (0001)-oriented sapphire substrates
2019
Journal of Applied Physics
M. Barchuk
Mykhaylo Motylenko
T. Schneider
M. Förste
Christian Röder
A. Davydok
Sergey Lazarev
Christian Schimpf
Christina Wüstefeld
Olf Pätzold
David Rafaja
Show All
Source
Cite
Save
Citations (3)
Modified high temperature vapor phase epitaxy for growth of GaN films
2017
Physica Status Solidi (a)
G. Lukin
T. Schneider
M. Barchuk
F. Zimmermann
Elke Niederschlag
O. Pätzold
Michael Stelter
Show All
Source
Cite
Save
Citations (7)
Studies on high temperature vapor phase epitaxy of GaN
2017
Journal of Crystal Growth
T. Schneider
G. Lukin
F. Zimmermann
M. Barchuk
Elke Niederschlag
O. Pätzold
Michael Stelter
Show All
Source
Cite
Save
Citations (5)
1