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Yasuhiro Kagawa
Yasuhiro Kagawa
Mitsubishi
Electrical engineering
Short circuit
Trench
MOSFET
Materials science
4
Papers
26
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Which is harder SOA test for SiC MOSFET to do Unclamped Inductive Switching (UIS) or Unloaded Short Circuit mode Switching (USCS)? Does UIS play a role of USCS?
2020
ISPSD | International Symposium on Power Semiconductor Devices and IC's
Kazuhiko Hasegawa
Kensuke Taguchi
Yasuhiro Kagawa
Eisuke Suekawa
Naoto Kaguchi
Yasuo Ata
Hideki Haruguchi
Yu Nakashima
Tadaharu Minato
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Impact of grounding the bottom oxide protection layer on the short-circuit ruggedness of 4H-SiC trench MOSFETs
2014
ISPSD | International Symposium on Power Semiconductor Devices and IC's
Rina Tanaka
Yasuhiro Kagawa
Nobuo Fujiwara
Katsutoshi Sugawara
Yutaka Fukui
Naruhisa Miura
Masayuki Imaizumi
Satoshi Yamakawa
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Dispositif semi-conducteur en carbure de silicium et procédé de fabrication de celui-ci
2013
Rina Tanaka
rina tanaka
Yasuhiro Kagawa
yasuhiro kagawa
Shiro Hino
sirou hino
Naruhisa Miura
miura naruhisa
Masayuki Imaizumi
masayuki imaizumi
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The silicon carbide semiconductor device and process for their preparation
2013
Yasuhiro Kagawa
Rina Tanaka
Yuji Abe
Masayuki Imaizumi
Yutaka Fukui
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