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P. L Voss

Centre national de la recherche scientifique

4

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Towards P-Type Conduction in Hexagonal Boron Nitride: Doping Study and Electrical Measurements Analysis of hBN/AlGaN Heterojunctions.

2021 Nanomaterials
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Mask effect in nano-selective- area-growth by MOCVD on thickness enhancement, indium incorporation, and emission of InGaN nanostructures on AlN-buffered Si(111) substrates

2017 Optical Materials Express
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Semibulk InGaN: a Novel Approach for Thick, Single Phase, Epitaxial InGaN Layers Grown by MOVPE

2012
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Application of dilute boron B(Al,In,Ga)N alloys for UV light sources

2011 Proceedings of SPIE
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Citations (3)