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Jean-Paul Salvestrini

Georgia Institute of Technology
University of Lorraine
Georgia Tech Lorraine

81

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563

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Van der Waals epitaxy of nitride optoelectronic devices based on two-dimensional hBN

2021
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Growth and characterization of cubic GaN grown on GaAs (110) substrate by MOVPE

2021 Materials Science in Semiconductor Processing
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Monolithic Free-Standing Large-Area Vertical III-N Light-Emitting Diode Arrays by One-Step h-BN-Based Thermomechanical Self-Lift-Off and Transfer

2021
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Optical characterization by photoreflectance of GaN after its partial thermal decomposition

2021 Optik
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Side-by-side comparison of pre- and post-transferred LEDs grown on 2D hexagonal boron nitride onto arbitrary substrates

2021
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Towards P-Type Conduction in Hexagonal Boron Nitride: Doping Study and Electrical Measurements Analysis of hBN/AlGaN Heterojunctions.

2021 Nanomaterials
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MOVPE of GaN-based mixed dimensional heterostructures on wafer-scale layered 2D hexagonal boron nitride—A key enabler of III-nitride flexible optoelectronics

2021 APL Materials
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Photovoltaic Concentration: Research and Development

2020 Energies
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Impact of the Sensor Temperature on Low Acetone Concentration Detection Using AlGaN/GaN HEMTs

2020
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Control of the Mechanical Adhesion of III–V Materials Grown on Layered h-BN

2020 ACS Applied Materials & Interfaces
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