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Yangsoo Sung
Yangsoo Sung
Samsung
Electrical engineering
Engineering
Electronic engineering
Capacitance
Dram
3
Papers
20
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Fully Integrated 56 nm DRAM Technology for 1 Gb DRAM
2007
VLSIT | Symposium on VLSI Technology
Yoon-Moon Park
S.H. Lee
J. W. Lee
Ji-Hwon Lee
Sung-hee Han
Eun-Cheol Lee
Seoung Hyun Kim
Jungin Han
Junghun Sung
Young-Joon Cho
J.Y. Jun
Dae-Yup Lee
Kijoon H. P. Kim
D.K. Kim
Sung-Hoon Yang
Bo-Young Song
Yangsoo Sung
Hyun-Sook Byun
W.S. Yang
K.H. Lee
Seongyong Park
C.S. Hwang
Tae-Young Chung
W S Lee
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Citations (13)
70nm DRAM technology for DDR-3 application
2005
VLSIT | Symposium on VLSI Technology
Hyungtak Kim
Sangho Kim
S.H. Lee
Sungho Jang
Ji-Hoon Kim
Yangsoo Sung
J. H. Park
Saehan Kwon
Sangmin Jun
Wontae Park
Daehan Han
Chang-hyun Cho
Yun Gi Kim
Kinam Kim
Byung-Il Ryu
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Citations (4)
A 6F/sup 2/ DRAM technology in 60nm era for gigabit densities
2005
VLSIT | Symposium on VLSI Technology
Chang-hyun Cho
Sangho Song
Sangho Kim
Sungho Jang
S.H. Lee
Hyungtak Kim
Yangsoo Sung
Sangmin Jeon
Gi-Sung Yeo
Young-sun Kim
Yun Gi Kim
Gyo-Young Jin
Kinam Kim
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Citations (3)
1