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Ji-Hwon Lee
Ji-Hwon Lee
Samsung
Electronic engineering
NAND gate
Flash memory
Communication channel
Optoelectronics
4
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65
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Fully Integrated 56 nm DRAM Technology for 1 Gb DRAM
2007
VLSIT | Symposium on VLSI Technology
Yoon-Moon Park
S.H. Lee
J. W. Lee
Ji-Hwon Lee
Sung-hee Han
Eun-Cheol Lee
Seoung Hyun Kim
Jungin Han
Junghun Sung
Young-Joon Cho
J.Y. Jun
Dae-Yup Lee
Kijoon H. P. Kim
D.K. Kim
Sung-Hoon Yang
Bo-Young Song
Yangsoo Sung
Hyun-Sook Byun
W.S. Yang
K.H. Lee
Seongyong Park
C.S. Hwang
Tae-Young Chung
W S Lee
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Citations (13)
Improved performance of multi-giga bit NAND flash using channel orientation
2006
NMDC | Nanotechnology Materials and Devices Conference
Hye-Jin Cho
Byung Young Choi
Hee Soo Kang
Suk-kang Sung
Tae-Hun Kim
Byung Kyu Cho
Dong-uk Choi
Albert Fayrushin
Jong Ho Lim
Ji-Hwon Lee
Andrew T. Kim
Hongshik Kim
In-Sun Jung
Yonghan Roh
Choong-ho Lee
Kyu-Charn Park
Donggun Park
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Effect of low-k dielectric material on 63nm MLC (multi-level cell) NAND flash cell arrays
2005
VLSIT | Symposium on VLSI Technology
Min-Cheol Park
Jung Dal Choi
Sung-Hoi Hur
Jong-Ho Park
Joon-hee Lee
Jintaek Park
Jong-Sun Sel
JongWon Kim
Sang-Bin Song
Jung-Young Lee
Ji-Hwon Lee
Suk-Joon Son
Yong-Seok Kim
Soo-Jin Chai
Kyeong-tae Kim
Kinam Kim
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Citations (1)
8 Gb MLC (multi-level cell) NAND flash memory using 63 nm process technology
2004
IEDM | International Electron Devices Meeting
Jong-Ho Park
Sung-Hoi Hur
Joon-Hee Leex
Jintaek Park
Jong-Sun Sel
JongWon Kim
Sang-Bin Song
Jung-Young Lee
Ji-Hwon Lee
Suk-Joon Son
Yong-Seok Kim
Min-Cheol Park
Soo-Jin Chai
Jung Dal Choi
U In Chung
Joo-Tae Moon
Kyeong-tae Kim
Kinam Kim
Byung-Il Ryu
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Citations (51)
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