70nm DRAM technology for DDR-3 application

For the first time, we developed 70nm DRAM technology applicable to a manufacturing level. This technology is aimed at DDR-3 application, which requires low-voltage operation and high speed performance. Fully working 70nm DRAMs were realized combining W-gate dual poly process, recess-channel-array-transistors (RCATs), and MIM cell capacitor module. In this paper, we present performance of 70nm node DRAMs which qualifies DDR-3 application requirement.