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W. Chikhaoui
W. Chikhaoui
Institut des Nanotechnologies de Lyon
Electronic engineering
High-electron-mobility transistor
Gallium nitride
Degradation (geology)
Lag
7
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127
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Temperature dependent degradation modes in AlGaN/GaN HEMTs
2010
EuMIC | European Microwave Integrated Circuits Conference
Y. Douvry
V. Hoel
J.C. De Jaeger
N. Defrance
C. Sury
Nathalie Malbert
Nathalie Labat
Arnaud Curutchet
C. Dua
M. Oualli
M. Piazza
Jean-Marie Bluet
W. Chikhaoui
C. Bru-Chevallier
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Citations (1)
Deep traps analysis in AlGaN/GaN heterostructure transistors
2010
Physica Status Solidi (c)
W. Chikhaoui
Jean-Marie Bluet
C. Bru-Chevallier
C. Dua
R. Aubry
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Citations (21)
Characterisation and modelling of parasitic effects and failure mechanisms in AlGaN/GaN HEMTs
2009
Microelectronics Reliability
Nathalie Malbert
Nathalie Labat
Arnaud Curutchet
C. Sury
V. Hoel
J.C. De Jaeger
N. Defrance
Y. Douvry
C. Dua
M. Oualli
C. Bru-Chevallier
Jean-Marie Bluet
W. Chikhaoui
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Citations (16)
Deep levels investigation of AlGaN/GaN heterostructure transistors
2009
Physica B-condensed Matter
W. Chikhaoui
J.-M. Bluet
P. Girard
G. Bremond
C. Bru-Chevallier
C. Dua
R. Aubry
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Citations (13)
1