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J.C. De Jaeger

Centre national de la recherche scientifique
university of lille
Lille University of Science and Technology

179

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1478

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Extraction of Packaged GaN Power Transistors Parasitics Using S-Parameters

2019 IEEE Transactions on Electron Devices
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Reliability assessment of ultra-short gate length AlGaN/GaN HEMTs on Si substrate by on-state step stress

2016 Microelectronics Reliability
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Large-signal modeling up to W-band of AlGaN/GaN based high-electron-mobility transistors

2015 EuMIC | European Microwave Integrated Circuits Conference
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Theoretical and experimental investigation of Lamb waves characteristics in AlN/TiN and AlN/TiN/NCD composite membranes

2014 IUS | Internaltional Ultrasonics Symposium
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Dispersion properties and low infrared optical losses in epitaxial AlN on sapphire substrate in the visible and infrared range

2014 Journal of Applied Physics
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Power Performance of AlGaN/GaN High-Electron-Mobility Transistors on (110) Silicon Substrate at 40 GHz

2013 IEEE Electron Device Letters
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STARGAN : études de structures avancées de la filière nitrure de gallium (GaN)

2013
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Electron delay analysis and image charge effect in AlGaN/GaN HEMT on silicon substrate

2013 ESSDERC | European Solid-State Device Research Conference
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Optical properties of aluminum nitride thin films grown by direct-current magnetron sputtering close to epitaxy

2013 Thin Solid Films
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AlGaN/GaN HEMTs on Silicon Substrate With 206-GHz $F_{ \rm MAX}$

2013 IEEE Electron Device Letters
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Citations (81)