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Y. Douvry
Y. Douvry
university of lille
Electronic engineering
Engineering
Gallium nitride
Degradation (geology)
Lag
5
Papers
20
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Analysis of AlGaN/GaN epi-material on resistive Si(111) substrate for MMIC applications in millimeter wave range
2010
EuMIC | European Microwave Integrated Circuits Conference
F. Lecourt
Y. Douvry
N. Defrance
V. Hoel
Y. Cordier
J.C. De Jaeger
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Temperature dependent degradation modes in AlGaN/GaN HEMTs
2010
EuMIC | European Microwave Integrated Circuits Conference
Y. Douvry
V. Hoel
J.C. De Jaeger
N. Defrance
C. Sury
Nathalie Malbert
Nathalie Labat
Arnaud Curutchet
C. Dua
M. Oualli
M. Piazza
Jean-Marie Bluet
W. Chikhaoui
C. Bru-Chevallier
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Reliability assessment in different HTO test conditions of AlGaN/GaN HEMTs
2010
IRPS | International Reliability Physics Symposium
Nathalie Malbert
Nathalie Labat
Arnaud Curutchet
C. Sury
V. Hoel
J.C. De Jaeger
N. Defrance
Y. Douvry
C. Dua
M. Oualli
M. Piazza
C. Bru-Chevallier
Jean-Marie Bluet
W. Chikhaoui
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Citations (2)
Microwave power capabilities of InAlN/GaN HEMTs
2010
MRWC | International Conference on Microwaves, Radar & Wireless Communications
J.C. De Jaeger
Christophe Gaquiere
Y. Douvry
N. Defrance
V. Hoel
Sylvain Delage
N. Sarazin
E. Morvan
M. Alomari
E. Kohn
A. Dussaigne
J.-F. Carlin
J. Kusmik
Clemens Ostermaier
D. Pogany
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Characterisation and modelling of parasitic effects and failure mechanisms in AlGaN/GaN HEMTs
2009
Microelectronics Reliability
Nathalie Malbert
Nathalie Labat
Arnaud Curutchet
C. Sury
V. Hoel
J.C. De Jaeger
N. Defrance
Y. Douvry
C. Dua
M. Oualli
C. Bru-Chevallier
Jean-Marie Bluet
W. Chikhaoui
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Citations (16)
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