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M.C. Wilson
M.C. Wilson
University of Oxford
Analytical chemistry
Silicon
Annealing (metallurgy)
Ion implantation
Transmission electron microscopy
5
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34
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Precipitation of oxygen in single-crystal silicon implanted with high doses of oxygen
1985
Thin Solid Films
P.L.F. Hemment
E.A. Maydell-Ondrusz
J E Castle
R. Paynter
M.C. Wilson
R.G. Booker
John A. Kilner
R.P. Arrowsmith
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Citations (8)
TEM AND RBS STUDIES OF THE REGROWTH OF ARSENIC IMPLANTED POLYSILICON DUE TO AN OXIDATION DRIVE-IN
1982
Le Journal De Physique Colloques
M.C. Wilson
P. Ashburn
B. Soerwirdjo
G.R. Booker
P. Ward
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Regrowth Behavior of Three Different Damage Structures in P+ Implanted and Subsequently Laser Annealed Si
1980
Journal of The Electrochemical Society
D.K. Sadana
M.C. Wilson
G.R. Booker
J. Washburn
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Electron Microscope Studies Of Ion Implanted Silicon And Gallium Arsenide After Laser And Furnace Annealing
1980
Journal of Microscopy
D. K. Sadana
M.C. Wilson
G.R. Booker
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Citations (13)
TEM studies of P/sup +/ implanted and subsequently laser annealed Si
1979
Lawrence Berkeley National Laboratory
D.K. Sadana
M.C. Wilson
G. R. Booker
J. Washburn
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