TEM AND RBS STUDIES OF THE REGROWTH OF ARSENIC IMPLANTED POLYSILICON DUE TO AN OXIDATION DRIVE-IN

Polysilicon layers 140 nm thick were deposited onto (100) silicon slices, implanted with 5 x 1015 cm-2, 40keV arsenic ions, and given a dry oxygen drive-in at 1000°C. TEM and RBS studies showed that the polycrystalline grains initially coarsened and subsequently regrew to give single-crystal material. The time taken for the regrowth to occur depended on the treatment given to the silicon slice immediately prior to the polysilicon deposition. The resulting structures and arsenic distributions are described and discussed.